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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High temperature
operation
µA dc
Reverse current
4016
Col. 3 of
VR = rated VRWM (col. 2 of
IR2
leakage
1.3.2); pulsed (see 4.5.1)
TA = -65°C
Low temperature
operation:
Forward voltage
4011
110
V
IFM3 = 50 percent of IF1 (col. 6
VFM3
percent
of 1.4); pulsed (see 4.5.1)
of col. 6
of 1.4
IR = 50 µA dc pulsed (see
Breakdown voltage
Col. 2 of
V
V(BR2)
Subgroup 4
Forward recovery voltage
4026
V
IF =1 A; tr = 12 ns
VFRM
1N6626, U, US
8
1N6627, U, US
8
1N6628, U, US
8
1N6629, U, US
12
12
1N6630, U, US
20
1N6631, U, US
Capacitance
4001
40
pF
VR = 10 V dc, f = 0.1 to 1 MHz
CT
See footnote at end of table.
12



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