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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
50
Design Limit
10
5
1
0.5
0.001
0.01
0.1
1
10
50
tH He ating Time (se conds)
ZθX = 1.5ºC/W at 10 ms
RθJEC = 22ºC/W
FIGURE 3. Axial thermal impedance curve.
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