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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
10
Design Limit
5
1
0.5
10
20
0.1
1
0.001
0.01
He ating Time (se c)
ZθX = 1.5ºC/W at 10 ms
RθJEC = 6.5ºC/W
FIGURE 4. Surface mount thermal impedance.
19



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