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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
Average Sine Current (Io) vs Total Power (Po)
1N6631 ss590 Worst Case
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Po (W) for: Plot @ Tj=25C
Po (W) for: Plot @ Tj=75C
Po (W) for: Plot @ Tj=125C
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Po (W) for: Plot @ Tj=175C
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0.00
0.50
1.00
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2.00
2.50
3.00
3.50
Io (A)
FIGURE 8. Rectifier power versus IO (Average forward current for 1N6626 through 1N6631.
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