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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area
Still Air, PCB Horizontal
1000
100
1oz Foil
2oz Foil
3oz Foil
10
0.001
0.01
0.1
1
10
100
Pad Area per Pad (in2)
FIGURE 9. Thermal resistance versus pad area (for each pad) with 1, 2, and 3 oz Copper for 1N6626 through
1N6631.
25



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