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MIL-PRF-19500-604 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Characterization Only\) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, And 2N7281, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose characterization only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/604B
* TABLE I. Group A inspection - Continued.
1/
MIL-STD-750
Limit
Unit
Inspection
Symbol
Method
Conditions
Min
Max
Subgroup 7
Gate charge
3471
Condition A or B
ID = ID1; VGS ≤ 20V; IGS1 = IGS2
On-state gate charge
Qg(on)
2N7272
76
nC
2N7275
60
nC
2N7278
62
nC
2N7281
64
nC
Gate to source charge
Qgs
2N7272
13
nC
2N7275
12
nC
2N7278
12
nC
2N7281
12
nC
Gate to drain charge
Qgd
2N7272
38
nC
2N7275
29
nC
2N7278
30
nC
2N7281
32
nC
di/dt = 100 A/µs, VDD ≤ 30 V, Id = Id1
trr
Reverse recovery time
3473
2N7272
450
ns
2N7275
600
ns
2N7278
800
ns
2N7281
900
ns
1/ For sampling plan, see MIL-PRF-19500.
12



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