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MIL-PRF-19500-604 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Characterization Only\) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, And 2N7281, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose characterization only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/604B

Dimensions

Ltr

Inches

Millimeters

Min

Max

Min

Max

.315

.335

8.01

8.50

.160

.180

4.07

4.57

.350

.370

8.89

9.39

.190

.210

4.83

5.33

.016

.023

0.41

0.58

.500

.560

12.7

14.22

.016

.021

0.41

0.53

.050

1.27

.250

6.35

.100

2.54

.040

1.02

.010

0.018

.029

.045

0.74

1.14

.028

.034

0.72

0.86

45� TP

Term 1

Source

Term 2

Gate

Term 3

Drain

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Terminals 1 and 2 are isolated from case, terminal 3 is butt welded to stem base.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 1. Dimensions and configuration (similar to TO-205).