MIL-PRF-19500-604 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Characterization Only\) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, And 2N7281, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose characterization only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/604B

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161

of MIL-STD-750. The maximum limit of RθJC(max) = 5.00�C/W. The following parameter measurements shall apply:

Measuring current (IM) ........................................................................10 mA.

Drain heating current (IH)....................................................................1 A.

Heating time (tH) .................................................................................Steady-state (see method 3161 of

MIL-STD-750 for definition).

Drain-source heating voltage (VH) ......................................................25 V.

Measurement time delay (tMD)............................................................30 to 60 �s.

Sample window time (tSW) ..................................................................10 �s maximum.