MIL-PRF-19500-604 Semiconductor Device, Field Effect Radiation Hardened \(Total Dose Characterization Only\) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, And 2N7281, Jantxvm, D, And R, And Jansm, D, And RThis specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened \(total dose characterization only\), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.

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MIL-PRF-19500/604B

3.7 Electrical test requirements. The electrical test requirements shall be specified in table I.

* 3.8 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

* 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

* 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified

herein. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500.

* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein shall be performed on the first inspection lot of this revision to

maintain qualification.