For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


MIL-PRF-19500/607B
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-
750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method
3161 of MIL-STD-750. RθJA maximum = 90°C/W, for each die.
a.
IM measuring current................................... 10 mA.
b.
IH drain heating current ............................... 0.15 A minimum.
c.
tH heating time ........................................... Steady-state (see method 3161 of MIL-STD-750 for definition).
d.
VH drain-source heating voltage ................ 15 V.
tMD measurement time delay ...................... 30 to 60 µs.
e.
tSW sample window time ............................ 10 µs maximum.
f.
10



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.