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MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B

* 1.3 Maximum ratings. Unless otherwise specified, TA = +25�C. Continued.

EAS

RθJA2

Max RDS(ON) (1)

IDM (4)

TJ and

EAR

IAR

RθJA1

maximum

VGS = 10 V dc, ID = ID2

TSTG

(4 die)

(1 die)

ohms

�C/W

�C

A(pk)

TJ = +25�C

TJ = +150�C

N-CH

P-CH

N-CH

P-CH

N-CH

P-CH

N-CH

P-CH

-55 to

.14

1.0

4.0

+150

0.7

1.4

(1) Derate linearly 11.2 mW/�C for TA > +25�C.

(2) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires

and may be limited by pin diameter:

TJM - TC

ID = (

R θJC ) x ( R DS ( on ) at TJM )

(3) See figure 3, maximum drain current graphs.

1.4 Primary electrical characteristics at TC = +25�C.

Max RDS(on)1 (1)

Min V(BR)DSS

VGS(th)1

Max IDSS1

N-channel

P-channel

N-channel

P-channel

N-channel

P-channel

N-channel

P-channel

Type

VDS ≥ VGS VDS ≥ VGS

VGS = 0 V

VGS = -10 V

VDS = 80 percent of

VGS = 10 V

2N7337

ID = 1.0 mA ID = -1.0 mA ID = 0.25 mA ID = -0.25 mA

ID = ID2

rated VDS

ID = ID2

�A dc

V dc

ohms

V dc

min max

100

-100

-25

0.7

2.0

4.0

-2.0 -4.0

(1) Pulsed (see 4.5.1).