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MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Method
Conditions
Min
Max
Subgroup 4 - Continued
Turn-off delay time
td(off)
N-channel
VGS = 10 V
40
ns
P-channel
VGS = -10 V
60
ns
Fall time
tf
N-channel
VGS = 10 V
40
ns
P-channel
VGS = -10 V
60
ns
Subgroup 5
EAS
See 4.3.3
3470
Single pulse avalanche
energy
Electrical measurements
See table I, subgroup 2
Safe operating area test
See figure 5, VDS = 80
percent of rated V(BR)DSS,
tp = 10 ms
N-channel
ID = 0.25 A
P-channel
ID = -0.25 A
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
3471
Condition B
Gate charge
VDD = 0.5 BVDSS, ID = ID1
Qg(on)
On-state gate charge
VGS ≤ 20V, IGS1 = IGS2
N-channel
15
nC
P-channel
22
nC
Gate to source charge
Qgs
N-channel
7.5
nC
P-channel
8.0
nC
See footnotes at end of table.
13



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