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MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Units

Method

Conditions

Min

Max

Subgroup 1

2071

Visual and mechanical

inspection

Subgroup 2

Thermal response 2/

3161

See 4.3.4

ZθJC

Breakdown voltage,

3407

Bias condition C

V(BR)DSS

drain to source

VGS = 0 V

N-channel

ID = 1.0 mA dc

100

V dc

P-channel

ID = -1.0 mA dc

-100

V dc

VDG ≥ VGS

Gate to source

3403

VGS(th)1

voltage (threshold)

N-channel

ID = 0.25 mA dc

2.0

4.0

V dc

P-channel

ID = -0.25 mA dc

-2.0

4.0

V dc

IGSSF1

+100

nA dc

Gate current

3411

Bias condition C, VGS = +20 V

dc, VDS = 0

IGSSR1

-100

nA dc

Gate current

3411

Bias condition C, VGS = -20 V

dc, VDS = 0

Drain current

3413

Bias condition C, VGS = 0 V dc,

IDSS1

VDS = 80 percent of rated VDS

�A dc

N-channel

�A dc

P-channel

-25

Static drain to source on-

3421

Bias condition A, ID = rated ID2

rDS(ON)1

state resistance

(see 1.3)

Ω

N-channel

VGS = 10 V

0.7

Ω

P-channel

VGS = -10 V

0.7

Forward voltage

4011

Pulsed (see 4.5.1), Id = Id1

1.8

V dc

VSD

VGS = 0 V dc

�A dc

N-channel

�A dc

P-channel

-25

See footnotes at end of table.