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MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Units
Method
Conditions
Min
Max
Subgroup 7 - Continued
Qgd
Gate to drain charge
nC
7.5
N-channel
nC
14.0
P-channel
di/dt = 100 A/µs, Id = rated
3473
Trr
Reverse recovery time
Id1
ns
200
N-channel
VDD ≤ 30 V
ns
200
P-channel
VDD ≤ -30 V
1/
For sampling plan, see MIL-PRF-19500.
2/
This test is not intended for screen 9, 11, or 13.
14



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