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MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B
Dimension
Dimensions
Symbol
Inches
Millimeters
Symbol
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.105
.165
2.67
4.19
LS
.290
.315
7.37
8.00
LH
.025
.050
0.64
1.27
LS1
.095
.105
2.41
2.67
LW
.015
.021
0.381
0.533
LL
.125
.175
3.18
4.45
LW1
.042
.058
1.07
1.47
LL1
.000
.030
0.00
0.76
α
0°
15°
0°
15°
LT
.008
.012
0.203
0.305
BL
.735
.760
18.67
19.30
R
.010
---
0.25
---
BW
.295
.322
7.49
8.18
S
.030
.095
0.76
2.41
BW1
.280
.305
7.11
7.75
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
* 3. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Dimensions and configuration (MO-036AB).
3



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