MIL-PRF-19500-607 Semiconductor Device, Field Effect Transistors, N-Channel And P-Channel, Silicon, Type 2N7337 Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). One level of product assurance is provided for unencapsulated device.

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MIL-PRF-19500/607B

Inches

.018

0.46

.019

0.48

.025

0.64

.026

0.67

.032

0.82

.064

1.63

.087

2.21

.095

2.41

.114

2.90

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is � .005 (0.13 mm).

4. The physical characteristics of the die thickness are .0187 (0.474 mm). The metals are chromium, nickel, and

silver. The top metal is aluminum and the back contact is the drain.

* 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. JANHCA die dimensions.