The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 16 April 2014.
MIL-PRF-19500/610F
16 January 2014
SUPERSEDING
MIL-PRF-19500/610E
1 December 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER,
TYPES 1N6677-1 AND 1N6677UR-1,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier diodes. Four
levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and
two levels of product assurance for each unencapsulated device type die.
1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC die)
dimensions.
* 1.3 Maximum ratings.
Types (1)
VRWM
IO1 (2)
IFSM
TSTG
TJ
°C
°C
V (pk)
mA dc
A (pk)
1N6677-1,
40
200
5
-65 to +150
-65 to +125
1N6677UR-1
* (1) Maximum ratings for the 1N6677UR-1 are identical to the 1N6677-1.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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