MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F

* TABLE II. Group E inspection (all quality levels) for qualification and re-qualification.

Inspection

Sampling plan

Method

Conditions

Subgroup 1

45 devices

c=0

500 cycles -55�C to 100�C

Thermal shock

1056

500 cycles -55�C to 150�C

Temperature cycling

1051

Hermetic seal

1071

Test condition E

Electrical measurement

See table I, subgroup 2

Subgroup 2

45 devices

c=0

Steady-state reverse

1038

Test condition A; 1,000 hours, see 4.4.3.1,

bias

subgroup C6 herein.

Electrical measurement

See table I, subgroup 2

Subgroup 4

Thermal impedance

See MIL-PRF-19500, group E, subgroup 4.

curves

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

Subgroup 9

45 devices, c = 0

Resistance to glass

1057

Test condition B. Test to destruction or 25 cycles

cracking

max, whichever comes first.