For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


. . . . . . . . . . . . .
MIL-PRF-19500/610F
4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a
minimum, die shall be 100 percent probed in accordance with table 1, subgroup 2.
4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF = 200 mA dc. Mounting and test conditions in
accordance with method 1038 of MIL-STD-750, test condition B.
4.3.2.1 Mounting. Devices may be mounted using any convenient method including the temporary attachment of
leads on UR suffix devices, provided that the parts are burned-in at TJ ≥ +110°C.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using statistical
methods and it shall not exceed table 1, subgroup 2 herein.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500
and table I herein. The following test conditions shall be used for ZθJX, table 1 inspection:
a. IM measurement current ....................................................... 1 mA to 10 mA.
b. IH forward heating current .................................................... 0.5 A to 1.0 A.
c. tH heating time ...................................................................... 10 ms.
d. tMD measurement delay time ................................................ 70 µs maximum.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS), and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical
measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
-55°C to 100°C, 25 cycles, n = 22, c = 0.
B3
1056
-55°C to 150°C, 100 cycles, n = 22, c = 0.
1051
IFSM = 5 A(pk), condition A 2, IO = 200 mA; TA = room ambient as
B3
4066
defined in the general requirements of MIL-STD-750 (see 4.5); 5 surges
of 8.3 ms each at 1 minute intervals.
B4
1036
IO = 200 mA; TA = room ambient as defined in the general requirements
of MIL-STD-750 (see 4.5); f = 50 - 60 Hz; VRWM = 40 V(pk); ton = toff = 3
minutes minimum for 2,000 cycles.
IF = 200 mA dc minimum, adjust IF or TA to achieve TJ = + 125°C
B5
1027
minimum.
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.