MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F

4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a

minimum, die shall be 100 percent probed in accordance with table 1, subgroup 2.

4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF = 200 mA dc. Mounting and test conditions in

accordance with method 1038 of MIL-STD-750, test condition B.

4.3.2.1 Mounting. Devices may be mounted using any convenient method including the temporary attachment of

leads on UR suffix devices, provided that the parts are burned-in at TJ ≥ +110�C.

4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with

method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using statistical

methods and it shall not exceed table 1, subgroup 2 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500

and table I herein. The following test conditions shall be used for ZθJX, table 1 inspection:

a. IM measurement current ....................................................... 1 mA to 10 mA.

b. IH forward heating current .................................................... 0.5 A to 1.0 A.

c. tH heating time ...................................................................... 10 ms.

d. tMD measurement delay time ................................................ 70 �s maximum.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIA (JANS), and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical

measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein.

4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

-55�C to 100�C, 25 cycles, n = 22, c = 0.

1056

-55�C to 150�C, 100 cycles, n = 22, c = 0.

1051

IFSM = 5 A(pk), condition A 2, IO = 200 mA; TA = room ambient as

4066

defined in the general requirements of MIL-STD-750 (see 4.5); 5 surges

of 8.3 ms each at 1 minute intervals.

1036

IO = 200 mA; TA = room ambient as defined in the general requirements

of MIL-STD-750 (see 4.5); f = 50 - 60 Hz; VRWM = 40 V(pk); ton = toff = 3

minutes minimum for 2,000 cycles.

IF = 200 mA dc minimum, adjust IF or TA to achieve TJ = + 125�C

1027

minimum.