MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F

4.4.5 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 3101

or 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the devices during test. The

maximum limit for RθJL under these test conditions shall be RθJL(max) = 250�C/W and RθJEC(max) = 100�C/W. The

following conditions shall apply:

a. IM = 1 mA to 10 mA.

b. IH = 200 mA.

c. tH = 20 seconds minimum.

d. tMD = 70 �s maximum.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in 4.3.2.1 of MIL-STD-750.

4.5.2 Steady-state operation life. This test shall be conducted with a half-sine wave of the specified peak voltage

impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average

rectified current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less

than 150 degrees.