MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F

4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, JANTXV of MIL-PRF-19500).

Subgroup

Method

Condition

-55�C to 100�C, 10 cycles, n = 22, c = 0.

1056

-55�C to 150�C, 25 cycles, n = 22, c = 0.

1051

IFSM = 5 A(pk), condition A 2, IO = 200 mA; TA = room ambient as

4066

defined in the general requirements of MIL-STD-750 (see 4.5); 5 surges

of 8.3 ms each at 1 minute intervals.

IF = 200 mA dc minimum, adjust IF or TA to achieve TJ = + 125�C

1027

minimum.

2075

As specified.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with

the applicable inspections of table I, subgroup 2 herein.

4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Tension: Test condition A; weight = 10 pounds; t = 15 s. Lead fatigue:

Test condition E; weight 1 pound. NOTE: Both tension and lead fatigue

are not applicable for UR devices.

3101

See 4.4.5 herein.

IF = 200 mA dc minimum, adjust IF or TA to achieve TJ = + 125�C

1027

minimum.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with table E-IX of MIL-PRF-19500

and the conditions for subgroup testing in table II herein. Electrical measurements (end-points) shall be in

accordance with the applicable inspections of table I, subgroup 2 herein.