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MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
°C/W
ZθJX
3101
See 4.3.3
20
Thermal impedance
Forward voltage
4011
IFM = 20 mA (pk), pulse method (see
VFM1
0.37
V
4011
IFM = 200 mA (pk), pulse method (see
VFM2
0.50
V
4011
IFM = 630 mA (pk), pulse method (see
VFM3
0.70
V
µA
Reverse current leakage
4016
VRM = 40 V (pk), pulse method (see
IRM1
5.0
Subgroup 3
TA = +100°C
High temperature operation:
Reverse current leakage
4016
VRM = 40 V (pk), pulse method (see
IRM2
0.60
mA
Forward voltage
4011
IF = 200 mA (pk), pulse method (see
VFM4
0.47
V
TA = -55°C
Low temperature operation:
µA
Reverse current leakage
4016
VRM = 40 V (pk), pulse method (see
IRM3
20
Forward voltage
4011
IF = 200 mA (pk), pulse method (see
VFM5
0.60
V
Subgroup 4
VR = 0 V dc, .01 ≤ f ≤ 1 MHz,
4001
CT
50
pF
Capacitance
VSIG = 15 mV p-p
1/ For sampling plan, see MIL-PRF-19500.
11



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