MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 50 percent copper by

weight. Lead finish shall be in accordance with MIL-PRF-19500 and MIL-STD-750. Where a choice of lead finish is

desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug construction in accordance with

the requirements of category I or II (see MIL-PRF-19500).

3.4.2.1 Surface mount. The UR version shall be considered structurally identical to the non-UR version except for

lead attach.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Marking for UR devices. UR-suffix devices only, all marking (except for 3.6) may be omitted from the body,

but shall be retained on the initial container.

3.6 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.

Alternatively, for UR suffix devices, a minimum of three contrasting color dots spaced around the periphery on the

cathode end may be used.

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with table II herein and