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MIL-PRF-19500-610 Semiconductor Device, Hermetic, Diode, Silicon, Schottky Barrier, Types 1N6677-1 And 1N6677Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/610F
A version
Symbol
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
.021
.025
0.53
0.64
B
.013
.017
0.33
0.43
Design data
Metallization:
Top: (Anode)................. AL
Back: (Cathode)............ Au
AL thickness .................. 25,000 Å minimum
Gold thickness ............... 4,000 Å minimum
Chip thickness ............... 10 mils (0.254 mm) ± 2 mils (0.051 mm)
FIGURE 3. JANC (A-version) die dimensions.
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