MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G

6.6 Application data.

6.6.1 Manufacturer specific irradiation data. Each manufacturer qualified to this slash sheet has characterized its

devices to the requirements of MIL-STD-750 method 1080 and as specified herein. Since each manufacturer's

characterization conditions can be different and can vary by the version of method 1080 qualified to, the

MIL-STD-750 method 1080 revision version date and conditions used by each manufacturer for characterization have

been listed here (see table IV) for information only. SEE conditions and figures listed in section 6 are current as of

the date of this specification sheet, please contact the manufacturer for the most recent conditions.