MIL-PRF-19500-624 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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INCH�POUND

MIL�PRF�19500/624E

The documentation and process conversion

31 December 2012

measures necessary to comply with this revision

SUPERSEDING

shall be completed by 31 March 2013.

MIL�PRF�19500/624D

18 June 2009

(See 6.4)

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON

TYPES 2N7370, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL�PRF�19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, high power Darlington

transistors. Four levels of product assurance are provided for each device type as specified in MIL�PRF�19500.

1.2 Physical dimensions. The device package style is TO�254AA in accordance with figure 1.

1.3 Maximum ratings. Unless otherwise specified, TA = +25�C.

PT (1)

VCBO

VCEO

VEBO

TJ and TSTG

Type

RθJC (2)

TC = +25�C

�C/W

�C

V dc

A dc

2N7370

100

1.5

100

5.0

0.2

�65 to +200

(1)

See figure 2 for temperature-power derating curves.

(2)

See figure 3 for transient thermal impedance graph.

Comments, suggestions, or questions on this document should be addressed DLA Land and Maritime ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218�3990, or emailed to semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at https://assist.dla.mil.

AMSC N/A

FSC 5961