MIL-PRF-19500-624 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/624E

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL�PRF�19500 and as follows:

�

The measurement current applied to forward bias the junction for measurement of VBE.

�

The collector current applied to the device under test during the heating period.

�

The duration of the applied heating power pulse.

tSW

�

Sample window time during which final VBE measurement is made.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

3.4.1 Lead finish. The lead finish shall be solderable in accordance with MIL�PRF�19500, MIL�STD�750, and

herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Lead formation. Where a choice of lead formation is desired, it shall be specified in the acquisition document

(see 6.2). When lead formation is performed, as a minimum, the vendor shall perform hermetic seal in accordance

with screen 14 of table E�IV of MIL�PRF�19500 and 100 percent dc testing in accordance with subgroup 2 of table I

herein on all devices that had its leads altered.

3.4.3 Lead isolation. Methods used for electrical isolation of the terminal feedthroughs shall employ material that

contain a minimum of 90 percent ceramic AL2O3 or equivalent. Examples of such construction techniques are

metalized eyelets or ceramic walled packages.

3.4.4 Polarity. The polarity of the device shall be as shown on figure 1.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.7 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4 and tables I and II).