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MIL-PRF-19500-624 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/624E

TABLE I. Group A inspection.

Limit

MIL�STD�750

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

examination

2071

Subgroup 2

Thermal impedance 2/

3131

See 4.3.1

�C/W

ZθJX

Bias condition D, IC = 100 mA dc;

VCEO(sus)

Breakdown voltage

3011

100

V dc

collector to emitter

pulsed (see 4.5.1)

Bias condition D; VCE = 50 V dc

ICEO

Collector to emitter

3041

1.0

cutoff current

Bias condition D, VEB = 5 V dc

IEBO

Emitter to base

3061

2.0

cutoff current

Bias condition A, VBE = 1.5 V dc

ICEX1

Collector to emitter

3041

0.01

mA dc

VCE = 100 V dc

cutoff current

Test condition A; IC = 12 A dc

VBE(sat)

Base to emitter

3066

4.0

V dc

IB = 120 mA dc; pulsed (see 4.5.1)

saturated voltage

IC = 12 A dc; IB = 120 mA dc;

VCE(sat)

Saturation voltage;

3071

3.0

V dc

collector to emitter

pulsed (see 4.5.1)

VCE = 3.0 V dc, IC = 6.0 A dc;

hFE1

Forward-current transfer ratio

3076

1,000

18,000

pulsed (see 4.5.1)

VCE = 3.0 V dc, IC = 12 A dc,

hFE2

Forward-current transfer ratio

3076

150

pulsed (see 4.5.1)

Subgroup 3

TA = +150�C

High temperature operation:

Bias condition A, VBE = 1.5 V dc

ICEX2

Collector to emitter

3041

5.0

mA dc

VCE = 100 V dc

cutoff current

TA = �55�C

Low temperature operation:

VCE = 3.0 V dc, IC = 6.0 A dc,

hFE3

Forward-current

3076

300

transfer ratio

pulsed (see 4.5.1)

See footnotes at end of table.