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MIL-PRF-19500-624 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/624E

TABLE I. Group A inspection � Continued.

Limit

MIL�STD�750

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 4

Pulse response

�s

Turn-on time

See figure 4

ton

2.0

�s

Turn-off time

See figure 4

toff

VCE = 3.0 V dc; IC = 5.0 A dc;

Magnitude of small-signal

3306

|hfe|

250

short-circuit forward-

f = 1 MHz

current transfer ratio

Subgroup 5

TC = +25�C; t ≥ 1 s; 1 cycle;

Safe operating area

3051

(continuous dc)

(see figure 5)

VCE = 8.3 V dc; IC = 12.0 A dc

Test 1

VCE = 30 V dc; IC = 3.3 A dc

Test 2

VCE = 90 V dc; IC = 150 mA dc

Test 3

Safe operating area

3053

Load condition B (clamped inductive

load); TA = +25�C; tr + tf ≤ 1.0 �s;

(switching, clamped

duty cycle ≤ 2 percent; tp = 1 ms;

inductive)

(vary to obtain IC); Rs = 0.10 Ω;

RBB1 = 80 Ω; VBB1 =16 V dc;

RBB2 = 100 Ω; VBB2 = 1.5 V dc;

IC =12 A dc; VCC = 20 V dc;

RL ≤ 2 Ω; L = 10 mH;

(Stancor C-2688 or equivalent)

clamp voltage = 100 +0, �5 V dc;

Device fails if clamp voltage not

reached

Electrical measurements

See subgroup 2 of this table

Subgroups 6 and 7

Not applicable

For sampling plan see MIL�PRF�19500.

This test required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.