MIL-PRF-19500-624 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington Type 2N7370, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN silicon, high power Darlington transistors. Four levels of product assurance are provided for each device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/624E

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL�PRF�19500, and as

specified herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table E�IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E�

Measurement

JANS

JANTX and JANTXV

of MIL�PRF�19500)

Thermal impedance (see 4.3.1)

3c (1)

ICEX1 and hFE2

Not applicable

ICEX1 and hFE2

Subgroup 2 of table I herein;

ICEX1 and hFE2;

ĆICEX1 = 100 percent of initial value or

2 �A dc, whichever is greater.

ĆhFE2 = � 40 percent of initial value

See 4.3.2

Subgroup 2 of table I herein. ICEX1 and hFE2;

Subgroups 2 and 3 of table I herein.

ICEX1 and hFE2; ĆICEX1 = 100 percent of

ĆICEX1 = 100 percent of initial value or 2 �A

initial value or 2 �A dc, whichever is

dc, whichever is greater.

ĆhFE2 = �40 percent of initial value

greater. ĆhFE2 = �40 percent of initial

value

(1) Thermal impedance shall be performed anytime after temperature cycling (screen 3a); JANTX and JANTXV

levels do not need to be repeated in screening requirements.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test

method 3131 of MIL�STD�750 using the guidelines in that method for determining IH, IM, tH, tSW, VH, and tMD, (and VC

where appropriate). Measurement delay time (tMD) = 70 �s maximum. The thermal impedance limit used in screen

3c of 4.3 and table I, subgroup 2 shall comply with the thermal impedance graph on figure 3 (less than or equal to the

curve value at the same tH time) and/or shall be less than the process determined statistical maximum limit as

outlined in test method 3131 of MIL�STD�750. See table II, subgroup 4 (group E) herein.

4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TJ = +175�C minimum, VCE = 10 to

30 V dc, TA = +30 �5�C.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E; table E�V of

MIL�PRF�19500, and table I herein.