MIL-STD-750F
NCSL INTERNATIONAL (NCSL)
NCSL Z540.3 - Requirements for the Calibration of Measuring and Test Equipment. (Copies of this document are available online at https://www.ncsli.org or can be obtained through NCSL
International, 2995 Wilderness Place, Suite 107, Boulder, CO 80301-5404.)
2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein (except for related applicable specification sheet, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. DEFINITIONS
3.1 Acronyms, symbols, and definitions. For the purposes of this standard, the acronyms, symbols, and definitions specified in MIL-PRF-19500, ASME Y14.38, and herein shall apply.
3.1.1 Acronyms used in this standard. Acronyms used in this standard are defined as follows:
a. |
BIST |
- Backward instability shock test. |
b |
CFM |
- Cubic feet per minute. |
c. |
DUT |
- Device under test. |
d. |
ESD |
- Electrostatic discharge. |
e. |
ESDS |
- Electrostatic discharge sensitivity. |
f. |
FET |
- Field-effect transistor. |
g. |
FIST |
- Forward instability shock test. |
h. |
GaAs |
- Gallium Arsenide. |
i. |
HTRB |
- High temperature reverse bias. |
j. |
Hz |
- Hertz. |
k. |
ICBO |
- Collector to base cutoff current. |
l. |
IGBT |
- Insulated gate bipolar transistor. |
m. |
LCC |
- Leadless chip carrier. |
n. |
mH |
- Microhenries. |
o. |
MOS |
- Metal oxide semiconductor. |
p. |
MOSFET |
- Metal oxide semiconductor field-effect transistor. |
q. |
NIST |
- National Institute of Standards and Technology. |
r. |
NPN |
- The doping regions of a particular type of bipolar junction transistor. |
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