MIL-STD-750F
4.3.2.7 Electrical characteristics tests for microwave diodes (test method series 4100). When device static or dynamic parameters are measured under pulsed conditions, in order to avoid measurement errors introduced by device heating during the measurement period, the following items should be covered in the performance specification sheet:
a. Measurement of conversion loss, output noise ratio, and other microwave parameters shall be conducted with the device fitted in the holder. All fixed adjustments of the holder shall be made at a laboratory designated by the Government. In the test equipment, the impedance presented to the mixer by the local oscillator (and the signal generator, if used) shall be the characteristic impedance of the transmission line between the local oscillator and mixer (the maximum VSWR, looking toward the local oscillator, shall be
1.05 at the signal and image frequencies).
b. For qualification inspection of reversible UHF and microwave devices, the radio frequency measurements, excluding the post environmental test end points and high temperature life (nonoperating) end points, shall be made, first, with the adapter on one end of the device, and then repeated with the adapter at the opposite end of the device; for the environmental and life tests, fifty percent of each sample shall be tested with the adapter on one end of the device and the remaining half of the sample shall be tested with the adapter on
the opposite end of the device. End point measurements shall be made without moving the adapter. This procedure shall be repeated on at least one lot every 6 months.
c. For quality conformance inspection of reversible UHF and microwave devices, the electrical measurements, including the post environmental test end points, may be made with the adapter on either end of the device.
4.3.3 Test circuits. The circuits shown are given as examples which may be used for the measurements. They are not necessarily the only circuits which can be used; however the manufacturer shall demonstrate to the Government that other circuits which they may desire to use will give results within the desired accuracy of measurement. Circuits are shown for PNP transistors in one circuit configuration only. They may readily be adapted for NPN devices and for other circuit configurations.
4.3.3.1 Test method variation. Variation from the specified test methods used to verify the electrical parameters are allowed provided that it is demonstrated to the preparing activity, or their agent, that such variations in no way relax the requirements of this standard and that they are approved before testing is performed. For proposed test variations, a test method comparative error analysis shall be made available for checking by the preparing activity or their agent.
4.3.4 Soldering. Adequate precautions shall be taken to avoid damage to the device during soldering required for tests.
4.3.5 Order of connection of leads. Care should be taken when connecting a semiconductor device to a power source. The common terminal shall be connected first.
4.3.6 Radiation precautions. Due precautions shall be used in storing or testing semiconductor devices in substantial fields of X-rays, neutrons, or other energy particles.
9
For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business