MIL-STD-750F
4.3 General precautions. The following precautions shall be observed in testing the devices.
4.3.1 Transients. Devices shall not be subjected to conditions in which transients cause the rating to be exceeded.
4.3.2 Test conditions for electrical measurements. Unless otherwise required for a specified test method, semiconductor devices should not be subjected to any condition that will cause any maximum rating of the device to be exceeded. The precautions should include limits on maximum instantaneous currents and applied voltages. High series resistances (constant current supplies) and low capacitances are usually required. If low cutoff or reverse current devices are to be measured; for example, nanoampere units, care should be taken to ensure that parasitic circuit currents, or external leakage currents are small compared with the cutoff or reverse current of the device to be measured.
4.3.2.1 Thermal resistance measurements (test method series 3100). For thermal resistance measurements, at least three temperature sensitive parameters (TSP) of the transistor can be used; the collector to base cutoff current, ICBO; the forward voltage drop of the emitter to base diode, VEB; and the forward voltage drop of the collector to base diode, VCB. The methods described in this test method standard refer to the thermal resistance between specified reference points of the device. For this type of measurement, power is applied to the device at two values of case, ambient, or other reference point temperature, such that identical values of ICBO, VEB, or VCB are read during the cooling portion of the measurement.
4.3.2.2 Low frequency tests (test method series 3200). Unless otherwise specified, the measurements shall be made at the electrical test frequency, 1,000 ±25 Hz. At 1,000 Hz, the reactive components may not be negligible.
4.3.2.3 High frequency tests (test method series 3300). Care shall be taken that, in designing the circuit and transistor mounting, adequate shielding and decoupling are provided and that series inductances in circuits are negligible.
4.3.2.4 Electrical characteristics tests for MOS field effect transistors (test method series 3400). Circuits are shown for n-channel field-effect transistors in one circuit configuration only. They may readily be adapted for p- channel devices and for other circuit configurations.
4.3.2.5 Steady-state dc measurements (test method series 4000). Unless otherwise specified, all steady-state dc parameters are defined using steady-state dc conditions.
4.3.2.6 Pulse measurements (test method series 4000). When device static or dynamic parameters are measured under pulsed conditions, in order to avoid measurement errors introduced by device heating during the measurement period, the following items should be covered in the performance specification sheet:
a. The statement "pulsed test" shall be placed by the test specified.
b. Unless otherwise specified, the pulse time (tp) shall be s10 milliseconds and the duty cycle shall be a maximum of 2 percent; within this limit the pulse must be long enough to be compatible with test equipment capability and the accuracy required, and short enough to avoid heating.
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