MIL-STD-750-SUP Test Methods for Semiconductor DevicesTest Methods for Semiconductor Devices

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MIL-STD-750F

4.8 Non-destructive tests. Unless otherwise demonstrated, the following test methods are classified as nondestructive:

Test method number	Test
1001	Barometric pressure
1022	Resistance to solvents
1026, 1027	Steady-state life
1031, 1032	High temperature life (non-operating)
1038, 1039, 1040	Burn-in screen
1042 (Condition A, B, and C)	Burn-in/life test for power MOSFETs
1051 (100 cycles or less)	Thermal shock (temperature cycling)
1071	Hermetic seal tests
2006	Constant acceleration
2016	Shock
2026	Solderability (if the original lead finish is unchanged and if the maximum allowable number of reworks is not exceeded.)
2052	PIND test
2056	Vibration, variable frequency
2066	Physical dimensions
2069, 2070, 2072, 2073, 2074	Internal visual (pre-cap)
2071	External visual
2076	Radiographic inspection
2081	FIST
2082	BIST
3101	Thermal impedance testing of diodes
3103	Thermal impedance measurements for IGBTs
3104	Thermal impedance measurements for GaAs
3051, 3052, 3053 (with limited supply voltage)	SOA (condition A for test method 3053)
3131	Thermal resistance (emitter to base forward voltage, emitter-only switching method)
4066	Surge current
4081	Thermal resistance of lead mounted diode (forward voltage, switching method)

NOTE: When the junction temperature exceeds the device maximum rated junction temperature for any operation or test (including electrical stress test), these tests shall be considered destructive except under transient surge or nonrepetitive fault conditions, or approved accelerated screening, when it may be desirable to allow the junction temperature to exceed the rated junction temperature. The feasibility shall be determined on a part by part basis and, in the case where it is allowed adequate sample testing, shall be performed to provide the proper reliability safeguards.