MIL-PRF-19500-323 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3250A, 2N3251A, 2N3250Aub, 2N3251Aub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jan...This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/323N

TABLE III. Group E inspection (all quality levels) - for qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

1051

Test condition C, 500 cycles.

45 devices

Temperature cycling

c=0

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

1037

45 devices

Intermittent life

VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on

c=0

cooling cycle only.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Thermal resistance

3131

15 devices,

The following applies for qualification for RθJSP(AM) and

c=0

RJSP(IS) can be calculated but shall be measured once in

the same package with a similar die size to confirm

calculations (can apply to multiple specification sheets).

Thermal impedance curves

See 4.2.2.1.

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

11 devices

Subgroup 8

1033

Condition B.

45 devices

Reverse stability

c=0