MIL-PRF-19500-323 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3250A, 2N3251A, 2N3250Aub, 2N3251Aub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jan...This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/323N

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

IBEX - - - Base cutoff current (dc) with specified circuit between the collector and emitter.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and on figure 1 (TO-18), figure 2 (UB surface mount), and figure 3 (die) herein. No lead (Pb) shall

be used in the construction of the die bonds.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test

levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

* 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I, 4.4.2, and 4.4.3

herein.

3.8 Marking. Devices shall be marked in accordance with MIL-PRF-19500, except for the UB suffix package.

Marking on the UB package shall consist of an abbreviated part number, the date code, and the manufacturer's

symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS

respectively. The "2N" prefix and the "UB" suffix can also be omitted. The radiation hardened designator M, D, P, L,

R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4, and tables I, II, and III).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.