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MIL-PRF-19500-323 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3250A, 2N3251A, 2N3250Aub, 2N3251Aub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jan...This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/323N
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 3
TA = +150°C
High-temperature
operation:
µA dc
Collector - emitter
3041
Bias condition A;
20
ICEX2
cutoff current
VCE = 40 V dc; VBE = 3.0 V dc
TA = -55°C
Low-temperature
operation:
Forward-current
3076
VCE = 1.0 V dc; IC = 1.0 mA dc
hFE5
transfer ratio
2N3250A,
20
2N3250AUB
2N3251A,
40
2N3251AUB
Subgroup 4
Small-signal short-circuit
3206
hfe
VCE = 10 V dc; IC = 1 mA dc;
forward-current transfer
f = 1 kHz
ratio
2N3250A,
50
200
2N3250AUB,
50
200
2N3251A,
100
400
2N3251AUB
100
400
Magnitude of common
3306
VCE = 20 V dc; IC = 10 mA dc;
| hfe |
emitter small-signal
f = 100 MHz
short-circuit forward-
current transfer ratio
2N3250A,
2.5
9.0
2N3250AUB
2N3251A,
3.0
9.0
2N3251AUB
Open circuit output
3236
6
pF
VCB = 10 V dc; IE = 0;
Cobo
capacitance
100 kHz ≤ f ≤ 1 MHz
Input capacitance
3240
8
pF
VEB = 1.0 V dc; IC = 0;
Cibo
(output open-circuited)
100 kHz ≤ f ≤ 1 MHz
Collector-base time
5
250
ps
VCE = 20 V dc; IC = 10 mA dc;
rb'Cc
constant
f = 31.8 MHz; (see 4.5.2 and
VCE = 5.0 V dc; IC = 100 µA dc;
Noise figure
3246
NF
6
dB
Rg = 1 kΩ; f = 100 Hz
See footnotes at end of table.
13



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