MIL-PRF-19500-323 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3250A, 2N3251A, 2N3250Aub, 2N3251Aub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jan...This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/323N

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Collector-base time constant. This parameter may be determined by applying an rf signal voltage of 1.0 volt

(rms) across the collector-base terminals, and measuring the ac voltage drop (Veb) with a high impedance rf voltmeter

across the emitter-base terminals. With f = 31.8 MHz used for the 1.0 V signal, the following computation applies;

rb'Cc (ps) = 5 x Veb (millivolts), see figure 10.