MIL-PRF-19500-350 Semiconductor Device, Transistor, Pnp, Silicon, Low Power Types 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, And 2N3868U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/350L

B version

Chip size:

.075 x .075 inch �.002 inch (1.905 x 1.905 mm �0.051 mm).

.010 inch �.0015 inch nominal (0.254 mm �0.0381 mm).

Chip thickness:

Top metal:

Aluminum 30,000 � minimum, 33,000 � nominal.

Back metal:

Gold 3,500� minimum, 5,000� nominal.

Backside:

Collector.

Bonding pad:

B = .023 x .008 inch (0.5842 x 0.2032 mm), E = .049 x .008 inch (1.2446 x 0.2032 mm).

* FIGURE 3. JANHCB and JANKCB die dimensions.