MIL-PRF-19500-350 Semiconductor Device, Transistor, Pnp, Silicon, Low Power Types 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, And 2N3868U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/350L

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, and 3.

3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

* 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the

devices to meet the applicable requirements of MIL-PRF-19500 and this document.

* 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

* 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

* 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II

herein.

* 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,

R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

* 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I, II, III, and IV).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.