MIL-PRF-19500-350 Semiconductor Device, Transistor, Pnp, Silicon, Low Power Types 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, And 2N3868U4, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for PNP, silicon, switching transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/350L

* 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV)

herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with

table I, subgroup 2 and table IV herein.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup Method

Condition

2036

Test condition E, not applicable for U4 devices.

RθJA and RθJC only, as applicable (see 1.3 and 4.3.3) and in accordance with thermal

3131

impedance curves.

1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150�C minimum

1026

and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3 n = 45, c = 0.

The sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.

4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Method

Condition

Subgroup

2036

Test condition E, not applicable for U4 devices..

RθJA and RθJC only, as applicable (see 1.3 and 4.3.3) and in accordance with thermal

3131

impedance curves.

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot

containing the intended package type and lead finish procured to the same specification which is submitted to and

passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation

at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a

subgroup using a single device type enclosed in the intended package type shall be considered as complying with the

requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.