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MIL-PRF-19500-398 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Types 2N3866, 2N3866A, 2N3866Ub, 2N3866Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/398K
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the
general requirements of MIL-STD-750; VCB = 10 to 30 V dc. Power shall be applied to achieve a junction temperature
TJ = +135°C minimum and power dissipation of PT ≥ 75 percent of max rated PT as defined in 1.3 herein. With
approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and
mounting conditions) may be used for JANTX and JANTXV. A justification demonstrating equivalence is required. In
addition, the manufacturing site's burn-in data and performance history will be essential criteria for burn-in
modification approval.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.3 Thermal response, (ĆVBE measurements). The ĆVBE measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The
ĆVBE limit used in screen 3c of 4.3 herein and table I, subgroup 2 shall be set statistically by the supplier over several
die lots and submitted to the qualifying activity for approval.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points)
shall be in accordance with table I, subgroups 2 and 3, as applicable. See 4.4.2.2 for JAN, JANTX, and JANTXV
group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in
4.4.2.2 and shall be in accordance with table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
VCB = 10 V dc; 2,000 cycles, adjust power or current to achieve a ĆTJ = +100°C.
B4
1037
VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a
B5
1027
failure occurs, resubmission shall be at the test conditions of the original
sample.)
Option 1: 96 hours minimum sample size in accordance with table E-VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to
achieve a TJ = +225°C minimum.
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