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MIL-PRF-19500-398 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Types 2N3866, 2N3866A, 2N3866Ub, 2N3866Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/398K
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued
Forward-current transfer
3076
VCE = 5.0 V dc; IC = 50 mA dc;
hFE1
ratio
pulsed (see 4.5.1)
15
2N3866, 2N3866UB
200
2N3866A, 2N3866AUB
25
200
Forward-current transfer
3076
VCE = 5.0 V dc; IC = 360 mA dc;
hFE2
ratio
pulsed (see 4.5.1)
2N3866, 2N3866UB
5.0
2N3866A, 2N3866AUB
8.0
Collector-emitter
3071
1.0
V dc
IC = 100 mA dc; IB = 10 mA dc;
VCE(sat)
saturated voltage
pulsed (see 4.5.1)
Subgroup 3
TA = +150°C
High temperature
operation
Collector to emitter
3041
Bias condition C; VCE = 55 V dc
ICES2
2.0
mA dc
cutoff current
TA = -55°C
Low temperature
operation
Forward-current transfer
3076
VCE = 5.0 V dc; IC = 50 mA dc;
hFE3
ratio
pulsed (see 4.5.1)
7
2N3866, 2N3866UB
2N3866A, 2N3866AUB
12
Subgroup 4
hfe
Magnitude of small-
3306
VCE = 15 V dc; IC = 50 mA dc;
signal short-circuit
f = 200 MHz
current transfer ratio
2.5
8.0
2N3866, 2N3866UB
2N3866A, 2N3866AUB
4.0
7.5
VCB = 28 V dc; IE = 0,
3.5
pF
Open circuit output
3236
Cobo
capacitance
100 kHz ≤ f ≤ 1 MHz
Power output
P1out
1.0
2.0
W
VCC = 28 V dc; Pin = 0.15 W;
f = 400 MHz (see figure 4 and 4.5.3)
Power output
VCC = 28 V dc; Pin = 0.075 W;
0.5
W
P2out
f = 400 MHz (see figure 4 and 4.5.3)
See footnotes at end of table.
13



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