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MIL-PRF-19500-398 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Types 2N3866, 2N3866A, 2N3866Ub, 2N3866Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/398K
4.4.3.2 Group C inspection, table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Method
Conditions
Subgroup
C2
2036
Test condition E (not applicable to UB suffix devices).
C6
Not applicable.
Pre-pulse condition VCE = 0, IC = 0; pulse condition IC = 400 mA dc, tP = 60 s,
C8
3005
1 cycle; tr ≤ 6s, tf ≤ 6s. Sample size, n = 22, c = 0 (see 4.5.4).
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS, JANJ, and JANTXV types shall
include the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose, or method 1017 of MIL-STD-750 for
neutron fluence, as applicable (see 6.2.e herein), except group D, subgroup 2 may be performed separate from other
subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance
with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing
provided there is no adverse effect to the fluence profile.
* 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method
3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 79 mA dc minimum.
b.
Collector to emitter voltage magnitude shall be 20 V dc minimum.
c.
Reference temperature measuring point shall be the case.
Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started.
d.
e.
Mounting arrangement shall be with heat sink to case.
Maximum limit of RθJC shall be 60°C/W for 2N3866, 2N3866A; RθJA shall be 325°C/W for 2N3866UB and
f.
2N3866AUB.
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