MIL-PRF-19500-398 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency, Types 2N3866, 2N3866A, 2N3866Ub, 2N3866Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, And JankchThis specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/398K

4.5.3 Power output and collector efficiency measurements. The device shall be tested in the circuit of figure 4

using the procedure outlined on figure 5. The specified conditions shall be applied and the variable capacitors

adjusted to obtain maximum power output. When the maximum power output is obtained, the collector current shall

be measured and recorded. The collector efficiency shall be computed as follows:

PO (watts) x 100

η in percent =

28 x IC (amperes)

4.5.4 Burn-out by pulsing. The devices shall be tested in the circuit of figure 6. The voltage source shall be

increased from zero until the specified current is reached. The current shall be maintained for the specified time.