The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 12 March 2013.
MIL-PRF-19500/478K
12 December 2012
SUPERSEDING
MIL-PRF-19500/478J
27 January 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,
TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, fast recovery power rectifier diodes.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product
assurance levels are provided for die.
1.3 Maximum ratings.
Types
VR
VRWM
IO
IFSM
trr
RθJC
TJ and
TSTG
(1)
(1)
tp = 8.3 ms
TC = +100°C
TC = +100°C
V dc
V (pk)
A dc
A(pk)
ns
°C/W
°C
1N5812, R
50
50
20
400
35
1.5
-65°C to
1N5814, R
100
100
20
400
35
+175°C
1N5816, R
150
150
20
400
35
(1) Derate linearly, 250 mA/°C from +100°C to +150°C and 300 mA/°C above +150°C.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
AMSC N/A
FSC 5961
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