MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

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MIL-PRF-19500/478K

* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with appendix E, table

E-IV of MIL-PRF-19500, and as specified herein. Specified electrical measurements shall be made in accordance

with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

Measurement

table E-IV of

JANS level

JANTXV and JANTX level

(1) 3b

Surge, see 4.3.1.

(2) 3c

Thermal impedance (see 4.3.2 and 4.4.1).

Not applicable.

VF2 and IR1.

(3) 11

Burn-in, see 4.3.3, method 1038 of

MIL-STD-750, test condition A. t = 240

MIL-STD-750, test condition A.

hours.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

(3) 13

ĆIR1 ≤ 2.5 �A dc or 100 percent of initial

ĆIR1 ≤ 2.5 �A dc or 100 percent of initial value,

value, whichever is greater.

whichever is greater.

ĆVF2 ≤ +0.05 V dc (pk) change from initial

ĆVF2 ≤ +0.05 V dc (pk) change from initial value.

value.

(1) Surge shall precede thermal response. These tests shall be performed anytime after screen 3 and before

screen 10.

(2) Thermal impedance need not be repeated for JANTX and JANTXV levels.

(3) IR1 measurement shall not be indicative of an open condition.

* 4.3.1 Surge current. Surge current, see method 4066 of MIL-STD-750.

IFSM = 400 A, six surges, tp = 8.3 ms or rectangular pulse of equivalent Irms.

IO = 0 A, VRMS = 0 V, duty factor 1 percent minimum TA = +25�C.