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MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

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MIL-PRF-19500/478K
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
See 4.3.2
ZθJX
3101 or
Thermal impedance 2/
*
°C/W
4081
Duty cycle ≤ 2 percent (pulsed
Forward voltage
4011
see 4.5.1); tp ≤ 8.3 ms
IF = 10 A
VF1
.860
V
IF = 20 A
VF2
.950
V
DC method; VR = rated VR
IR1
Reverse current
4016
10
µA
(see 1.3)
IR = 100 µA
Breakdown voltage
4021
V(BR)1
1N5812, 1N5812R
60
V
1N5814, 1N5814R
110
V
1N5816, 1N5816R
160
V
Subgroup 3
TC = +100°C
High temperature operation
DC method, VR = rated VR;
IR2
Reverse current
4016
1.00
mA
(see 1.3)
IFM = 10 A, duty cycle < 2
VF3
Forward voltage
4011
.780
V
percent (pulsed); tp < 8.3 ms
TA = -65°C
Low temperature operation
IFM = 10 A, duty cycle < 2
VF4
Forward voltage
4011
1.05
V
percent (pulsed); tp < 8.3 ms
IR = 100 µA
Breakdown voltage
4021
V(BR)2
1N5812, 1N5812R
50
V
1N5814, 1N5814R
100
V
1N5816, 1N5816R
150
V
See footnote at end of table.
12



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