MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/478K

* TABLE I. Group A inspection - Continued.

Inspection 1/

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 4

Test condition B4

trr

Reverse recovery time

4031

IF = IR = 1 A (pk)

I(REC) = 0.1 A; di/dt = 85 A/�s

minimum

VR = 10 V, f = 1 MHz

Junction capacitance

4001

300

VSIG = 50 mV (p-p) maximum

tP > 20 ns, tr = 8 ns;

VFR

Forward recovery voltage

4026

2.2

V (pk)

IF = 1,000 mA

tfr

Forward recovery time

4026

Subgroups 5, 6, and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

* 2/ This test required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.