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MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

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MIL-PRF-19500/478K
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Thermal shock (glass
1056
0°C to +100°C, 100 cycles.
strain)
*
Electrical measurements
See table I, subgroup 2 and table III, step 1.
*
Subgroup 2
45 devices
c=0
Steady-state dc blocking
1038
Test condition A, except in accordance with 4.3.3; 1,000
life
hours.
*
Electrical measurements
See table I, subgroup 2.
Subgroup 3
Not applicable
Subgroup 4
Thermal impedance
3101 or
curves
4081
Subgroup 5
Not applicable
14



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